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RF2001T3D
Diodes
Fast recovery diode
RF2001T3D
Applications General rectification External dimensions (Unit : mm)
9.9 0.8 0.3 2.2
Structure
10.0 10.00.3 0.1 1.80.2 7.00.3 0.1 4.50.3 0.1 2.80.2 1.1 0.1
1.3 0.8 (1) (2) (3) 2.540.5 0.70.015 2.540.5 1.9
13.5MIN
Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss
3.10.1 7.2 1.2 8.00.2 12.00.2
17.00.4 0.2
15.0 0.70.015 7.0 1.35 8.0
1.2
5.00.2
2.60.03 0.8
2.60.03
Construction Silicon epitaxial planar
7.2 3-1.2 1.6 12.4
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C)
Param eter R evers e voltage (repetitive peak) R evers e voltage (DC) Average rectified forward current(*1) Forward current s urge peak 60Hz 1cyc J unction tem perature S torage tem perature (* 1) Per chip Io/2 Sym bol VRM VR Io IFSM Tj Ts tg Lim its 300 300 20 100 150 -55 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Param eter Forward voltage Revers e current Revers e recovery tim e Sym bol VF IR Min. Typ. Max. 1.3 10 25 Unit V A ns IF =10A VR =200V IF=0.5A,IR=1A,Irr=0.25*IR Conditions
trr
1/3
RF2001T3D
Diodes
Electrical characteristic curves
10
100000 Ta=150 10000
Ta=150 Ta=125
1000 f=1MHz
1
Ta=125
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25
1000
Ta=75
100
0.1
Ta=75
Ta=-25
100 10
Ta=25
10
0.01
Ta=-25 1 0.1 0 50 100 150 200 250 300 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
0.001
0 10 0 20 0 3 00 4 00 5 00 6 00 70 0 80 0 9 00 1 00 11 0 12 0 0 0 0
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1.17 Ta=25 IF=10A n=30pcs
300 250 REVERSE CURRENT:IR(nA) Ta=25 VR=300V n=30pcs
400 390 380 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 360 350 340 330 320 310 AVE:356.9pF Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
1.16
200 150 100 AVE:29.7nA 50 0
1.15
1.14
1.13 AVE:1.135V 1.12 VF DISPERSION MAP
300 IR DISPERSION MAP Ct DISPERSION MAP 1000 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms
200 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 1cyc RESERVE RECOVERY TIME:trr(ns)
30
25
150
20
1cyc
100
15
10
10
50 AVE:157.0A 0 IFSM DISRESION MAP
5 AVE:20.3ns 0 trr DISPERSION MAP
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
100 TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Mounted on epoxy board
IM=100mA IF=5A
40 DC D=1/2 30 FORWARD POWER DISSIPATION:Pf(W) Sin(180)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t
10
1ms
time
Rth(j-a)
300us
100
20
1
Rth(j-c)
10
10 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS
0.1 0.001 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS
0 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2/3
RF2001T3D
Diodes
30 No break at 30kV 25 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 20 15 10 AVE:11.6kV 5 0 0 25 50 75 100 125 150 C=200pF R=0 C=100pF R=1.5k
50 45 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) Sin(180) D=1/2 DC 0A 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=150V Tj=150
50 45 40 35 30 25 20 15 10 5 0 Sin(180) D=1/2 DC
0A 0V t T
Io VR D=t/T VR=150V Tj=150
CASE TEMPARATURE:Tc() Derating Curve (Io-Tc)
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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